Factory Lead Time  

22 Weeks

Mount  

Surface Mount

Mounting Type  

Surface Mount

Package / Case  

TO-261-4, TO-261AA

Weight  

188.014037mg

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

7A Ta 18.2A Tc

Drive Voltage (Max Rds On, Min Rds On)  

4.5V 10V

Number of Elements  

1

Power Dissipation (Max)  

2W Ta

Turn Off Delay Time  

110 ns

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

3V @ 250μA

Operating Temperature  

-55°C~150°C TJ

Packaging  

Tape & Reel (TR)

Published  

2015

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

4

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - annealed

Additional Feature  

HIGH RELIABILITY

Capacitance  

2.569nF

Terminal Position  

DUAL

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PDSO-G4

Number of Channels  

1

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Case Connection  

DRAIN

Turn On Delay Time  

6 ns

FET Type  

P-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

28m Ω @ 5A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

2569pF @ 30V

Gate Charge (Qg) (Max) @ Vgs  

53.1nC @ 10V

Rise Time  

7.1ns

Drain to Source Voltage (Vdss)  

60V

Vgs (Max)  

±20V

Fall Time (Typ)  

62 ns

Continuous Drain Current (ID)  

18.2A

Gate to Source Voltage (Vgs)  

20V

Drain Current-Max (Abs) (ID)  

7A

Drain-source On Resistance-Max  

0.028Ohm

Drain to Source Breakdown Voltage  

-60V

Pulsed Drain Current-Max (IDM)  

50A

Avalanche Energy Rating (Eas)  

62.9 mJ

Max Junction Temperature (Tj)  

150°C

Height  

1.8mm

Length  

6.5mm

Width  

3.5mm

REACH SVHC  

not_compliant

RoHS Status  

ROHS3 Compliant